PART |
Description |
Maker |
W25X16VSSIG W25X32VSSIG W25X64VSSIG W25X16VSFI W25 |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
W25X16AVSNIG W25X16AVSSIG W25X16ALSFIG W25X16AVSFI |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI 16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond http://
|
DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存 64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K8D6316UBM-LC09 K8D638UBM-FC09 K8D6316UBM-LC08 K8D |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
http://
|
AT49LV2048B AT49LV2048B-45TI AT49BV2048B-70TI |
AT49BV/LV2048B [Updated 10/02. 13 Pages] 2M bit. 2.7-Volt (BV)/3-Volt (LV) Read and2.7-Volt (BV)/3-Volt (LV) Byte-Write Flash EEPROM EEPROM
|
TE Connectivity, Ltd.
|
IDT72V82L20PA IDT72V82L15PA 72V84_DS_9983 IDT72V85 |
4K x 9 DualAsync FIFO, 3.3V 3.3 Volt CMOS DUAL ASYNCHRONOUS FIFO DUAL 512 x 9, DUAL 1,024 x 9 DUAL 2,048 x 9, DUAL 4,096 X 9 From old datasheet system 3.3 Volt CMOS DUAL ASYNCHRONOUS FIFO DUAL 512 x 9 DUAL 1024 x 9 DUAL 2048 x 9 DUAL 4096 X 9
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
S29CD032G S29CD032G0JFAI000 S29CD032G0JFAI002 S29C |
CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY From old datasheet system 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
SPANSION[SPANSION]
|
V826664K24S |
2.5 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
|
Mosel Vitelic Corp Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
V437464Q24V V437464Q24VXTG-10PC V437464Q24VXTG-75 |
3.3 VOLT 64M x 72 HIGH PERFORMANCE UNBUFFERED ECC SDRAM MODULE 3.3400 × 72高性能无缓冲ECC内存模块
|
Mosel Vitelic, Corp. MOSEL[Mosel Vitelic, Corp]
|
AM29F400AB-65EC AM29F400AB-65EI AM29F400AB-65FC AM |
Dual Retriggerable Monostable Multivibrators 16-SO -40 to 85 512K X 8 FLASH 5V PROM, 60 ns, PDSO48 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PDSO48 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 4兆位24,288 x 8-Bit/26244 x 16位).0伏的CMOS只,扇区擦除闪存 4 Megabit (524/288 x 8-Bit/262/144 x 16-Bit) CMOS 5.0 Volt-only/ Sector Erase Flash Memory Dual Retriggerable Monostable Multivibrators 16-TVSOP -40 to 85 Dual Retriggerable Monostable Multivibrators 16-SOIC -40 to 85 4 Megabit (524,288x8-bit/262, 144x16 bit) CMOS 5.0Volt-only, sector erase flash memory
|
AMD Advanced Micro Devices, Inc.
|
AM29BDD160G |
(16 Megabit (1 M x 16-bit/512 K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Wr From old datasheet system
|
AMD Inc
|